Cambridge GaN Devices (CGD), a Cambridge, UK-based gallium nitride (GaN) power devices developer, raised $32M in Series C funding.
The round was led by a strategic investor with participation from British Patient Capital and existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.
The company intends to use the funds to expand its operations in Cambridge, North America, Taiwan and Europe, and deliver a new value proposition to its customer base.
Led by Dr. Giorgia Longobardi, CEO and Founder, Cambridge GaN Devices (CGD) is a semiconductor company spun-out by Prof. Florin Udrea and Dr. Giorgia Longobardi from Cambridge University in 2016 to develop energy-efficient semiconductors using gallium nitride (GaN). It designs, develops and commercialises GaN transistors and ICs enabling energy efficiency and compactness for its high-volume production. CGD’s technology will help electric vehicles and data centres be more energy efficient, presenting major opportunities in the global power semiconductor industry
FinSMEs
18/02/2025